a, nov ,2010 to - 220 f plastic - encapsulate diodes mbr f 1030 ,35,40,45,50 ct schottky barrier rectifier features ? schottky barrier chip ? guard rin g die construction for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications maxi mum ratings ( t a =25 unless otherwise noted ) value symbol parameter mbr f 10 30 ct mbr f 10 35 ct mbr f 10 40 ct mbr f 10 45 ct mbr f 10 50 ct unit v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc bloc king voltage 30 35 40 45 50 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 v i o average rectified output current 10 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 120 a p d power d issipation 2 w r ja thermal r esistance from j unction to a mbient 50 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 to - 220 f 1. anode 2. cathode 3. anode tiger electronic co.,ltd
a, nov ,2010 electrical characteristics (t a =25 unless otherwise specified) parameter symb ol device test conditions m in typ m ax u nit mbr f 1030ct 30 mbr f 10 35 ct 35 mbr f 10 40 ct 40 mbr f 10 45 ct 45 reverse voltage v (br) mbr f 10 50 ct i r = 0. 1 m a 50 v mbr f 1030ct v r = 30 v mbr f 10 35 ct v r = 35 v mbr f 10 40 ct v r = 40 v mbr f 10 45 ct v r = 45 v reverse c urrent i r mbr f 10 50 ct v r = 50 v 0.1 m a mbr f 1030ct mbr f 10 35 ct mbr f 10 40 ct mbr f 10 45 ct 0.7 v f (1 ) mbr f 10 50 ct i f = 5 a 0.8 mbr f 1030ct mbr f 10 35 ct mbr f 10 40 ct mbr f 10 45 ct 0.84 forward voltage v f (2 ) mbr f 10 50 ct i f = 10 a 0.95 v typical t otal capaci tance c tot mbr f 1030 - 50ct v r = 4 v,f=1mhz 150 pf
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